OPTEL is founded by the scientists and leading engineers which are former employees of the joint-stock company START. OPTEL is sited on START company technological spaces. The OPTEL specializations are the development of constructions of optoelectronic devices and packaging technologies for such devices. OPTEL is also interested in creation of new class optoelectronic devices and its technology dissemination.

Key ongoing R&D activities:

• Development and production of LED active in the visible and infrared regions
• Development and production of photo diodes
• Development optical (fiber and atmosphere) communications and alarm systems
• Development and production optrones

Research personnel: 25 people.

Existing infrastructure: Equipment for assembling of optical electronic devices, equipment for optical characteristic measurements of devices and p-n structures.

Relevant publications

1. L.S.Kogan. A monograph "Semiconductor light emitting diodes", Energo-Atom Izdat, Moscow, 1983, 200 p [in Russian].
2. V.A.Dmitriev, L.M.Kogan, Ya.V.Morozenko, I.V.Popov, V.S.Rodkin, V.E.Chelnokov, "Blue light emitting diodes grown by container-free liquid phase epitaxy", Sov. Tech. Phys. Lett., 12, 385 (1986).
3. B.I.Vishnevskaya, V.A.Dmitriev, I.D.Kovalenko, L.M.Kogan, Ya.V.Morozenko, A.L.Sirkin, B.V.Tsarenkov, V.E.Chelnokov, "Blue light emitting diodes on SiC-6H ", Sov. Phys. Semicond., 22, 664 (1988).
4. B.I.Vishnevskaya, V.A.Dmitriev, L.M.Kogan, Ya.V.Morozenko, V.E.Chelnokov, A.E.Cherenkov, "Green light emitting diodes on SiC-6H", Sov. Tech Phys.Lett., 16, 56 (1990).
5. V.A.Dmitriev, L.M.Kogan, Ya.V.Morozenko, B.V.Tsarenkov, V.E.Chelnokov, A.E.Cherenkov, "Violet light emitting diodes on SiC-4H ", Sov. Phys. Semicond., 23, 39 (1989).
6. V.A.Dmitriev, L.M.Kogan, Ta.V.Morozenko, B.V.Tsarenkov, “Silicon carbide violet light emitting diodes” Abstracts on the 176-Meeting of the Electrochemical Society,-USA:Hollywood, 1989, p.710.
7. V.A.Dmitriev, L.M.Kogan, Ta.V.Morozenko, V.E.Chelnokov, A.E.Cherenkov, “A light emitting diode with l _max~398 nm”, Sov. Tech Phys.Lett., 16, 21 (1990).