Texas Tech University

Semiconductor Research Group at Texas Tech University (TTU) is conducting research in many subjects of semiconductor technology and devices: (i) molecular beam epitaxy (MBE) of AlN, GaN and InN on Si and sapphire substrates; research and development of FETs based on AlGaN/GaN heterostructures and solar blind photodetectors based on AlGaN; (ii) MOMBE growth of GaAsN and InGaAsN on GaAs(100); (iii) gas source MBE of GaInAs/GaInP/GaAs laser heterostructures; (iv) modeling and characterization of VCSELs and other optoelectronic devices. The Group also organizes and co-ordinates a number of projects in optoelectronics and provides the participants with the needed materials and components. This function of TTU’s Group is well known to manufacturers of semiconductor lasers and III-V nitrides researchers.

Key ongoing R&D activities: research and development of III-V nitrides based optoelectronics devices.

Personnel: 16 people.

Scientific and commercial links: Cooperation with numerous research institutions, university-based and industrial, and manufacturing companies.

Existing infrastructure: one commercial (Riber-32) and two custom-designed low pressure epitaxial growth systems; UHV RHEED and LEED systems; AFM; SEM; Phillips X-ray diffraction system; post-growth equipment (clean room, lithography, electron gun evaporator, dry etching); computers and communication equipment; optical equipment for laser, LED and photodetectors testing.

Relevant publications

  1. Nikishin S. A., Zubrilov A. S., Faleev N. N., Antipov V. G., and Temkin H., “AlGaN grown on Si(111) by gas source molecular beam epitaxy”, Appl. Phys. Lett., May 22 (2000).

  2. Nikishin S. A., Faleev N. N., Antipov V. G., Francoeur S., Grave de Peralta L., Seryogin G. A., Holtz M., Prokofyeva T. I., Chu S. N. G., Zubrilov A. S., Elyukhin V. A., Nikitina I. P., Nikolaev A., Melnik, Yu., Dmitriev V., and Temkin H., “High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia”, Accepted December 31, 1999 for publication in 1999 Fall Materials Research Society Symposium Proceedings.

  3. Nikishin S., Faleev N., Chu S. N. G., and Temkin H., “High quality AlN and GaN on Si(111) by MBE with ammonia”, Proceeding of the Thirty-First Symposium “State-of-the-art program on compound semiconductors (SOTAPOCS XXXI)”, Hawaii, Honolulu, October 17-22, 1999, v 99-17, p. 238-42 (1999).

  4. Nikishin S. A, Antipov V. G., Francoeur S., Faleev N. N., Seryogin G. A., Temkin H., Prokofyeva T. I., Holtz M., and Chu S. N. G., “High-quality GaN grown on Si (111) by gas-source molecular-beam epitaxy with ammonia”, Appl. Phys. Lett., 75, no. 14, 2073-5 (1999).

  5. Francoeur S., Nikishin S. A., Jin C., Qiu Y. and Temkin H., “Excitons bound to nitrogen clusters in GaAsN”, Appl. Phys. Lett. 75, no.11, 1538-40 (1999).

  6. Nikishin S. A., Antipov V. G., Francoeur S., Faleev N. N., Seryogin G. A., Elyukhin V. A., Temkin H., Prokofyeva T. I., Holtz M., Konkar A., and Zollner S., “High-quality AlN grown on Si (111) by gas-source molecular-beam epitaxy with ammonia”, Appl. Phys. Lett., 75, no. 4, 484-6 (1999).

  7. Nikishin S. A., Antipov V. G., Guriev A. I., Elyukhin V. A. , Faleev N. N., Kudriavtsev Yu. A., Lebedev A. B., Shubina T. V., Zubrilov A. S., Temkin H. “Luminescence of GaN/GaAs(111)B grown by molecular beam epitaxy with hydrazine”, J. Vac. Sci. Technol. B 16, no. 3, 1289-92 (1998).

  8. Nikishin S. A., Temkin H., Antipov V. G., Guriev A. I., Zubrilov A. S., Elyukhin V. A. Faleev N. N., Kyutt R. N., Chin A. K., “Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates”, Appl. Phys. Lett., 72, no. 19, 2361-3 (1998).

  9. Antipov V. G., Guriev A. I., Elyukhin V. A. Kyutt R. N., Smirnov A. B., Faleev N. N., Nikishin S. A., Seryogin G. A., Temkin H., “Gas-source molecular beam epitaxy of GaN on SIMOX(111) substrates using hydrazine”, Inst. Phys. Conf. Ser. No 155: Chapter 3, 327-330 (1997).

  10. Yang J. W.. Sun C. J., Chen Q., Anwar M. Z., Asif Khan M., Nikishin S. A., Seryogin G. A., Osinsky A. V., Chernyak L., Temkin H.. Chimin Hu, Mahajan S., “High quality GaN-InGaN heterostructures grown on (111) silicon substrates”, Appl.Phys.Lett., 69, no.23, 3566-8 (1996).